大型記憶體晶圓廠投資
SK Hynix 推出兩座全新 DRAM 及 NAND 晶圓廠
SK Hynix 宣佈投資 54 兆韓元（約 381 億美元），於南韓興建兩座全新記憶體製造廠。公司計劃於龍仁廠投資 35.2 兆韓元，用於生產 NAND Fabs 及其他 DRAM 產品，並於清州廠投資 19.1 兆韓元，專注生產 NAND 儲存產品。
是次擴產旨在滿足人工智能數據中心日益增長的需求，首個潔淨室預計最快於 2029 年 6 月開始投產。SK Hynix 表示，此項投資是經過對市場需求全面審視後作出的決定，反映公司預期記憶體需求將隨人工智能基礎設施發展持續增長。
對企業客戶而言，這批新廠房或可擴大 HBM、DRAM 及 NAND 產品的長期供應。此項投資亦進一步印證半導體行業正轉向優先發展以人工智能為核心的記憶體產能，隨著數據中心需求持續重塑製造業策略。
英文原文
SK Hynix announced a 54 trillion won ($38.1 billion) investment to build two new memory fabrication facilities in South Korea. The company plans to invest 35.2 trillion won in a Yongin plant for NAND Fabs and other DRAM products and 19.1 trillion won in a Cheongju facility focused on NAND storage.
The expansion is intended to meet growing demand from AI data centers, with the first cleanroom expected to begin production as early as June 2029. SK Hynix said the investment followed a review of market demand and reflects expectations that memory requirements will continue rising alongside AI infrastructure development.
For enterprise customers, the new fabs could expand long-term supply of HBM, DRAM and NAND products. The investment also reinforces the semiconductor industry’s shift toward prioritizing AI-focused memory capacity as data-center demand continues to reshape manufacturing strategies.
- 來源
- Trend Hunter
- 發布
- 2026-08-18
- 品類
- Business
- 出處
- engadget